3mo
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Fab 9 Technology Development GaN Epitaxial Engineer
Essex Junction, Vermont, United States
$118k-$210k/yr OnsiteFull Time
1+ YOEMaster's degree in engineering/science with 1-3 years' experience; English proficiency; knowledge of MOCVD III-V epitaxial growth; strong device physics understanding; travel <10%; strong problem-solving and communication skills.
MOCVD, TCAD, SIMS, TEM, SEM, AFM, LSM
2mo
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Design Assurance & Process Development Manager - Global recruitement (Malmö, Hans Michelsensgatan (S, Greater Poland, PL - Poland)
Poznan or Magog or Suzhou or Cardiff
HybridFull Time
7+ YOEBachelor's in Engineering or related technical field; 7+ years in PD&E or related functions; strong knowledge of product development, regulatory/quality requirements for medical devices; English fluency; willingness to travel; strong communication and stakeholder engagement.